? Fast Access Time 8, 10, 12, 15ns(Max)

? CMOS Low Power   Dissipation

 Standby (TTL) : 10mA (Max.)

 (CMOS) : 6mA (Max.)

 Operating : 35mA (8ns, Max.)

 30mA (10ns, Max.)

? Single 3.3 ±0.3V   or 5.0 ±0.5V Power Supply

-   S6R20xxV1A : 3.3 ±0.3V Power Supply

-   S6R20xxC1A : 5.0 ±0.5V Power Supply

? Wide range of   Power Supply

 - S6R20xxW1A : 1.65V ~ 3.6V Power Supply

? TTL Compatible   Inputs and Outputs

? Fully Static   Operation, No Clock or Refresh required

? Three State   Outputs

? Data Byte   Control(x16 Mode)

LB :   I/O0~ I/O7, UB : I/O8~ I/O15

? Standard 44   TSOP2, 36FBGA and 48FBGA Package Pin

 Configuration

? Operating in   Commercial and Industrial Temperature range.

The   S6R2016(V/C/W)1A and S6R2008(V/C/W))1A are a 2,097,152-bit high-speed Static   Random Access Memory organized as 128K (256K) words by 16(8) bits. The   S6R2016(V/C/ W)1A (S6R2008(V/C/W)1A) uses 16(8) common input and output lines   and have an output enable pin which operates faster than address access time   at read cycle. And S6R2016(V/C/ W)1A allows that lower and upper byte access   by data byte control(UB, LB). The device is fabricated using advanced CMOS   process,6-TR based cell technology and designed for high-speed circuit   technology. It is particularly well suited for use in high-density high-speed   system applications. The S6R2016(V/W)1A is packaged in a 400mil 44-pin TSOP2   and 48FBGA. The S6R2016C1A is packaged in a 400mil 44-pin TSOP2. The   S6R2008(V/W)1A is packaged in a 400mil 44-pin TSOP2 and 36FBGA. The   S6R2008C1A is packaged in a 400mil 44-pin TSOP2.