High-speed access time: 12, 15 ns

?        Low active power: 160 mW (typical)

?        Low standby power: 1000 ?W (typical)   CMOS

standby

?        Output Enable (OE) and two Chip Enable

(CE1   and CE2) inputs for ease in applications

?        Fully static operation: no clock or   refresh

required

?        TTL compatible inputs and outputs

?        Single 5V (±10%) power supply

?        Commercial, industrial, and automotive   temperature

ranges   available

?        Lead free available

The   ISSI IS61C1024AL/IS64C1024AL is a very highspeed, low power, 131,072-word by   8-bit CMOS static RAMs. They are fabricated using ISSI&＃39;s high-performance   CMOS technology. This highly reliable process coupled with innovative circuit   design techniques, yields higher performance and low power consumption   devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a   standby mode at which the power dissipation can be reduced by using CMOS   input levels. Easy memory expansion is provided by using two Chip Enable   inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing   and reading of the memory. The IS61C1024AL/IS64C1024AL is available in 32-pin   300-mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP (Type I, 8x20), and 32-pin sTSOP   (Type I, 8 x 13.4) packages.