High-speed   access time: 10ns, 12ns

?   High- performance, low power CMOS process

?   Multiple center power and ground pins for

greater   noise immunity

? Easy   memory expansion with CS# and OE#

? TTL   compatible inputs and outputs

?   Single power supply

– 1.65V-2.2V VDD   (IS61/64WV102416DALL)

– 2.4V-3.6V VDD   (IS61/64WV102416DBLL)

?   Packages available :

- 48   ball mini BGA (6mm x 8mm)

- 48   pin TSOP (Type I)

?   Industrial and Automotive temperature support

?   Lead-free available

? Data   Control for upper and lower bytes

The   ISSI IS61/64WV102416DALL/BLL are high-speed, 16M bit static RAMs organized as   1024K words by 16 bits. It is fabricated using ISSI&＃39;s high-performance CMOS   technology. This highly reliable process coupled with innovative circuit   design techniques, yields high-performance and low power consumption devices.   When CS# is HIGH (deselected), the device assumes a standby mode at which the   power dissipation can be reduced down with CMOS input levels. Easy memory   expansion is provided by using Chip Enable and Output Enable inputs. The   active LOW Write Enable (WE#) controls both writing and reading of the memory.   A data byte allows Upper Byte (UB#) and Lower Byte (LB#) access. The device   is packaged in the JEDEC standard 48-Pin TSOP (TYPE I) and 48-pin mini BGA   (6mm x 8mm).