? High-speed access   times: 8, 10, 20 ns

? High-performance,   low-power CMOS process

? Multiple center   power and ground pins for greater

noise   immunity

? Easy memory   expansion with CE and OE options

? CE power-down

? Fully static   operation: no clock or refresh

required

? TTL compatible   inputs and outputs

? Single power   supply

– Vdd 1.65V to 2.2V   (IS61WV10248ALL)

 speed = 20ns for Vcc = 1.65V to 2.2V

– Vdd 2.4V to 3.6V   (IS61/64WV10248BLL)

 speed = 10ns for Vcc = 2.4V to 3.6V

 speed = 8ns for Vcc = 3.3V + 5%

? Packages   available:

– 48-ball miniBGA   (9mm x 11mm)

– 44-pin TSOP (Type   II)

? Industrial and   Automotive Temperature Support

? Lead-free   available

The   ISSI IS61WV10248ALL/BLL and

IS64WV10248BLL   are very high-speed, low

power,   1M-word by 8-bit CMOS static RAM. The

IS61WV10248ALL/BLL   and IS64WV10248BLL are fabricated

using   ISSI&＃39;s high-performance CMOS technology.

This   highly reliable process coupled with innovative

circuit   design techniques, yields higher performance

and   low power consumption devices.

When   CE is HIGH (deselected), the device assumes

a   standby mode at which the power dissipation can be

reduced   down with CMOS input levels.

The   IS61WV10248ALL/BLL and IS64WV10248BLL

operate   from a single power supply and all inputs are

TTL-compatible.

The   IS61WV10248ALL/BLL and IS64WV10248BLL are

available   in 48 ball mini BGA and 44-pin TSOP (Type

II)   packages.